Photoinduced second-harmonic generation in the indium tin oxide crystalline films
Identifieur interne : 00C771 ( Main/Repository ); précédent : 00C770; suivant : 00C772Photoinduced second-harmonic generation in the indium tin oxide crystalline films
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Abstract
The nanosized thin layers (about 1-2 nm) between the indium tin oxide crystalline films and glass substrates were studied using photoinduced optical and second-order nonlinear optical [second-harmonic generation (SHG)] effects. Photoinduced changes of the effective energy gap were found for the first time in the In2O3 films doped by different amount of Sn deposited on the glass substrates. The photoinduced second-order susceptibilities show a good correlation with the behavior of the fundamental absorption edge. The maximal SHG response of the photoinduced signal was observed for a pump-probe delay times equal to about 26 ps. The experimental measurements indicate that the observed effects are stimulated by two factors: the first factor is related to the interface potential gradients on the border glass interface. The second factor is a consequence of the additional polarization due to insertion different amount of Sn atoms. The observed phenomenon may be proposed as a sensitive tool for investigations of thin semiconducting-glass interface layers. © 2003 American Vacuum Society.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Photoinduced second-harmonic generation in the indium tin oxide crystalline films</title><author><name sortKey="Ebothe, J" uniqKey="Ebothe J">J. Ebothe</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Universite de Reims, UTAP-LMET, EA n° 2061, UFR Sciences, Boite Postale 138, 21 rue Clement Ader., 51685 Reims Cedex 02, France</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Universite de Reims, UTAP-LMET, EA n° 2061, UFR Sciences, Boite Postale 138, 21 rue Clement Ader., 51685 Reims Cedex 02</wicri:regionArea><placeName><region type="region" nuts="2">Champagne-Ardenne</region><settlement type="city">Reims</settlement></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Computer Modeling, ul. Warsaw 24, University of Technology, Krakow, Poland</s1></inist:fA14><country xml:lang="fr">Pologne</country><wicri:regionArea>Institute of Computer Modeling, ul. Warsaw 24, University of Technology, Krakow</wicri:regionArea><wicri:noRegion>Krakow</wicri:noRegion></affiliation><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Universite de Reims, UTAP-LMET EA n° 2061, UFR Sciences, Boite Postale 138, 21 rue Clement, 51685 Reims Cedex 02, France</s1></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Universite de Reims, UTAP-LMET EA n° 2061, UFR Sciences, Boite Postale 138, 21 rue Clement, 51685 Reims Cedex 02</wicri:regionArea><placeName><region type="region" nuts="2">Champagne-Ardenne</region><settlement type="city">Reims</settlement></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Institute of Physics WSP, Al. Armii Krajowej 13/15, Czestochowa, Poland</s1></inist:fA14><country xml:lang="fr">Pologne</country><wicri:regionArea>Institute of Physics WSP, Al. Armii Krajowej 13/15, Czestochowa</wicri:regionArea><wicri:noRegion>Czestochowa</wicri:noRegion></affiliation></author><author><name sortKey="Kityk, I V" uniqKey="Kityk I">I. V. Kityk</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Universite de Reims, UTAP-LMET, EA n° 2061, UFR Sciences, Boite Postale 138, 21 rue Clement Ader., 51685 Reims Cedex 02, France</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Universite de Reims, UTAP-LMET, EA n° 2061, UFR Sciences, Boite Postale 138, 21 rue Clement Ader., 51685 Reims Cedex 02</wicri:regionArea><placeName><region type="region" nuts="2">Champagne-Ardenne</region><settlement type="city">Reims</settlement></placeName></affiliation></author><author><name sortKey="Hichou, A El" uniqKey="Hichou A">A. El Hichou</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Universite de Reims, UTAP-LMET, EA n° 2061, UFR Sciences, Boite Postale 138, 21 rue Clement Ader., 51685 Reims Cedex 02, France</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Universite de Reims, UTAP-LMET, EA n° 2061, UFR Sciences, Boite Postale 138, 21 rue Clement Ader., 51685 Reims Cedex 02</wicri:regionArea><placeName><region type="region" nuts="2">Champagne-Ardenne</region><settlement type="city">Reims</settlement></placeName></affiliation></author><author><name sortKey="El Idrissi, B" uniqKey="El Idrissi B">B. El Idrissi</name></author><author><name sortKey="Addou, M" uniqKey="Addou M">M. Addou</name></author><author><name sortKey="Krasowski, J" uniqKey="Krasowski J">J. Krasowski</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Universite de Reims, UTAP-LMET, EA n° 2061, UFR Sciences, Boite Postale 138, 21 rue Clement Ader., 51685 Reims Cedex 02, France</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Universite de Reims, UTAP-LMET, EA n° 2061, UFR Sciences, Boite Postale 138, 21 rue Clement Ader., 51685 Reims Cedex 02</wicri:regionArea><placeName><region type="region" nuts="2">Champagne-Ardenne</region><settlement type="city">Reims</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0032280</idno><date when="2003-01">2003-01</date><idno type="stanalyst">PASCAL 03-0032280 AIP</idno><idno type="RBID">Pascal:03-0032280</idno><idno type="wicri:Area/Main/Corpus">00E044</idno><idno type="wicri:Area/Main/Repository">00C771</idno></publicationStmt><seriesStmt><idno type="ISSN">0734-2101</idno><title level="j" type="abbreviated">J. vac. sci. technol., A, Vac. surf. films</title><title level="j" type="main">Journal of vacuum science and technology. A. Vacuum, surfaces, and films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Energy gap</term><term>Experimental study</term><term>Indium compounds</term><term>Nonlinear optical susceptibility</term><term>Optical films</term><term>Optical harmonic generation</term><term>Semiconductor thin films</term><term>Spray coatings</term><term>Tin compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4265K</term><term>4270N</term><term>8115R</term><term>4265A</term><term>7866L</term><term>Etude expérimentale</term><term>Indium composé</term><term>Etain composé</term><term>Génération harmonique optique</term><term>Film optique</term><term>Couche mince semiconductrice</term><term>Susceptibilité optique non linéaire</term><term>Dépôt projection</term><term>Bande interdite</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The nanosized thin layers (about 1-2 nm) between the indium tin oxide crystalline films and glass substrates were studied using photoinduced optical and second-order nonlinear optical [second-harmonic generation (SHG)] effects. Photoinduced changes of the effective energy gap were found for the first time in the In<sub>2</sub>O<sub>3</sub> films doped by different amount of Sn deposited on the glass substrates. The photoinduced second-order susceptibilities show a good correlation with the behavior of the fundamental absorption edge. The maximal SHG response of the photoinduced signal was observed for a pump-probe delay times equal to about 26 ps. The experimental measurements indicate that the observed effects are stimulated by two factors: the first factor is related to the interface potential gradients on the border glass interface. The second factor is a consequence of the additional polarization due to insertion different amount of Sn atoms. The observed phenomenon may be proposed as a sensitive tool for investigations of thin semiconducting-glass interface layers. © 2003 American Vacuum Society.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0734-2101</s0></fA01><fA02 i1="01"><s0>JVTAD6</s0></fA02><fA03 i2="1"><s0>J. vac. sci. technol., A, Vac. surf. films</s0></fA03><fA05><s2>21</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Photoinduced second-harmonic generation in the indium tin oxide crystalline films</s1></fA08><fA11 i1="01" i2="1"><s1>EBOTHE (J.)</s1></fA11><fA11 i1="02" i2="1"><s1>KITYK (I. V.)</s1></fA11><fA11 i1="03" i2="1"><s1>HICHOU (A. 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Armii Krajowej 13/15, Czestochowa, Poland</s1></fA14><fA20><s1>201-205</s1></fA20><fA21><s1>2003-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>11992 A</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0032280</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of vacuum science and technology. A. Vacuum, surfaces, and films</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The nanosized thin layers (about 1-2 nm) between the indium tin oxide crystalline films and glass substrates were studied using photoinduced optical and second-order nonlinear optical [second-harmonic generation (SHG)] effects. Photoinduced changes of the effective energy gap were found for the first time in the In<sub>2</sub>O<sub>3</sub> films doped by different amount of Sn deposited on the glass substrates. The photoinduced second-order susceptibilities show a good correlation with the behavior of the fundamental absorption edge. The maximal SHG response of the photoinduced signal was observed for a pump-probe delay times equal to about 26 ps. The experimental measurements indicate that the observed effects are stimulated by two factors: the first factor is related to the interface potential gradients on the border glass interface. The second factor is a consequence of the additional polarization due to insertion different amount of Sn atoms. 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